Presentation Title: Creating Nickel(II) Oxide Nanowires For Applications in Memristor Technology Using An Electrospinning Method and Thermal Annealing
Section: The Nano World II
Location: McCardell Bicentennial Hall, 216
Date & Time: Friday, April 19, 2013 - 11:55am - 12:10pm
Nickel (II) oxide (NiO) nanowires that are only 1/10,000,000 of meter wide have potential for energy efficient and dense memory chips in modern technology. This emerging technology is known as memristor technology. The NiO nanowires have a presence of mobile oxide ions in an ionic lattice, along with the density of these ions that can be packed in a dimensionally-confined high surface area material. In these experiments, NiO nanowires were created by a technique called electrospinning in which a solution of nickel nitrate, polyvinylpyrolidone (PVP), and methanol yield a fiber which is then heated at temperatures up to 1000 degrees Celcius. NiO nanowires were able to be modulated from ca. 70 nm to an upper limit of 330 nm, most sensitively affected by the initial nickel nitrate concintration. An automated syringe pump was used which improves the size and width distribution of the nanowires. Upon preliminary testing of the hysteretic behavior of a 250 nm nanowire it seems that the behavior is consistent with memristive properties.
Type of Presentation: Individual oral
Presentation Area: Physics
Number of presenters:
Presenter(s): Palomba, Alyssa Mae
Major(s): Political Science with undeclared Physics and Global Health minors
Class Year(s): 2014
Sponsor(s): Goodsell, Anne L.